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BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE
s
APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
1 2
TO-3 (version " P ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 350 250 10 60 80 16 350 -65 to 200 200 Unit V V V A A A W
o o
C C 1/4
BUR52
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEO I EBO
Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0)
Test Conditions V CB = 350 V V CB = 350 V V CE =250 V V EB = 7 V I C = 200 mA I E = 10 mA I C = 25 A I C = 40 A I C = 25 A I C = 40 A IC = 5 A I C = 40 A V CE = 20 V IC = 1 A f = 1 MHz IC = 40 A V CC = 100 V IC = 40 A I B2 = -4 A V clamp = 250 V IB = 2 A IB = 4 A IB = 2 A IB = 4 A V CE = 4 V V CE = 4 V t=1s V CE = 5 V I B1 = 4 A I B1 = 4 A V CC = 100 V L = 500 H T case = 125 o C
Min.
Typ.
Max. 0.2 2 1 0.2
Unit mA mA mA A V V
V CEO(sus) Collector-Emitter Sustaining Voltage V EBO V CE(sat) V BE(sat) h FE I s/b fT t on ts tf Emitter-base Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transition-Frequency Turn-on Time Storage Time Fall Time Clamped E s/b Collector Current
250 10 1 1.5 1.8 2 100
0.7 1.5 20 15 17.5 10 0.3 1.2 0.2 40
V V V V
A 16 1 2 0.6 MHz s s s A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BUR52
TO-3 (version P) MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 1.45 2.7 8.9 19.00 10.70 16.50 25.00 3.88 38.50 30.00 30.14 10.9 16.9 TYP. 11.7 1.5 MAX. 13.10 1.60 2.92 9.4 20.00 11.10 17.20 26.00 4.2 39.30 30.30 MIN. 0.433 0.057 0.106 0.350 0.748 0.421 0.650 0.984 0.153 1.516 1.181 1.186 0.429 0.665 inch TYP. MAX. 0.516 0.063 0.115 0.370 0.787 0.437 0.677 1.024 0.165 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003I
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E
BUR52
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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